SPICE Parameter Extraction From Automated Measurement Of JFET and MOSFET Characteristics In The Computer-Integrated Electronics Laboratory

This paper describes a procedure to extract major SPICE parameters of a field-effect transistor (JFET, MESFET or MOSFET) from its transfer and output i-v characteristics while introducing a technique that facilitates an accurate measurement of these characteristics with the help of standard bench-top electronic test equipment in a computer-integrated-electronics laboratory. The measurement technique, by requiring the availability of a function generator and only one digital-multi-meter (DMM) creates a means to do a quick and inexpensive determination of the SPICE parameters of field-effect transistors in-situ for computer-assisted electronics design. The technique and the extraction procedure have been tested and incorporated into the electronics laboratory experiments at the University of Southern Maine.